System-level line-edge roughness limits in extreme ultraviolet lithography

As critical dimensions shrink, line edge and width roughness (LER and LWR) become of increasing concern. Traditionally LER is viewed as a resist-limited effect; however, as critical dimensions shrink and LER requirements become proportionally more stringent, system-level effects begin to play an important role. Recent advanced EUV resist testing results have demonstrated lower bounds on achievable LER at the level of approximately 2 to 3 nm. Here we use modeling to demonstrate that a significant portion of this low bound may in fact be do to system-level effects and in particular the mask. Of concern are both LER on the mask as well as roughness of the multilayer reflector. Modeling also shows roughness (flare) in the projection optics not to be of concern. Keyword: extreme ultraviolet, lithography, multilayer, mask, line-edge roughess